12-15 September 2022
Europe/Rome timezone

MOVPE of III-V Materials: The (Neglected) Role of Surface Dynamics and its Potentials for Next Generation Devices and Integration

14 Sep 2022, 14:30
30m
DCPS Building C11/III Floor/- - Lecture Hall A3 (Università di Trieste)

DCPS Building C11/III Floor/- - Lecture Hall A3

Università di Trieste

46
Keynote Interplay between Crystal Growth and Advanced Characterizations for Materials Development MS

Speaker

Dr Emanuele Pelucchi (Tyndall National Institute, University College Cork)

Description

Over the last ~50 years, semiconductor epitaxy has shaped our high-tech society. While several epitaxial growth technologies have been successfully used for decades, few have been utilised industrially and are implemented for large-scale, high-volume applications. Metalorganic Vapor Phase Epitaxy (MOVPE) is one of these well-established technologies, underpinning the majority of III-V semiconductor device fabrication (especially in photonics), and underlying key developments not only for III-Vs, but also III-Ns for lighting and power solutions.
Despite the broad technological use of MOVPE, there still persist a large number of fundamental unresolved issues. These are tightly tied to a lack of understanding of the complexity of the epitaxial process and dynamics, and, as a result, are effectively limiting a broad range of further device developments.
Here we will discuss ~ 20 years of research and related results which importantly contributed to establish the current understanding, starting from highlighting the relevance of metalorganic precursors for growth on planar and patterned substrates [1, 2].
We will highlight the surprising “zoology” of the reported surface organization and underline the need for proper theoretical modelling, including describing unexpected surface organization paths, such as Volmer-Weber dot formation at the lattice matched InP/AlInAs interface [3].
We will also present novel results on surfactant physics, including presenting clear evidence that one of the main device design limiting factors in today’s MOVPE processes (i.e. Zn diffusion complicating P-I-N device stacking) actually is not often linked to “crystallographic” diffusion but indeed induced by surfactant effects [4].

Figure 1. Representative examples from [3] (AFM) of Volmer-Weber physics in the lattice matched InP/AlInAs system. Panels c,d are obtained with different InP coverage. In lower panels a larger area was scanned

[1] A. L.-S. Chua, E. Pelucchi, A. Rudra, B. Dwir, and E. Kapon, A. Zangwill, D. D. Vvedensky, Appl. Phys. Lett. 2008, 92, 013117.
[2] V. Dimastrodonato, E. Pelucchi, and D. D. Vvedensky, Phys. Rev. Lett. 2012, 108, 256102.
[3] Agnieszka Gocalinska, Marina Manganaro, Gediminas Juska, Valeria Dimastrodonato, Kevin Thomas, Bruce A. Joyce, Jing Zhang, Dimitri D. Vvedensky, and Emanuele Pelucchi, Appl. Phys. Lett. 2014, 104, 141606.
[4] A. Ozcan-Atar, A. Gocalinska, P.P. Michalowski and E. Pelucchi, Compound Semiconductor week, CSW-2021 online conference, 2021, May 9-13,

Primary author

Dr Emanuele Pelucchi (Tyndall National Institute, University College Cork)

Co-authors

Dr Agnieszka Gocalinska (Tyndall National Institute, University College Cork) Dr Ayse Ozcan-Atar (Tyndall National Institute, University College Cork)

Presentation Materials