12-15 September 2022
Europe/Rome timezone

Direct-ARPES and STM Investigation of FeSe Thin Film Growth by Nd:YAG Laser

14 Sep 2022, 16:15
15m
DCPS Building C11/III Floor/- - Lecture Hall A3 (Università di Trieste)

DCPS Building C11/III Floor/- - Lecture Hall A3

Università di Trieste

46
Oral presentation Interplay between Crystal Growth and Advanced Characterizations for Materials Development MS

Speaker

Dr Sandeep Kumar Chaluvadi (CNR-IOM)

Description

Research on ultrathin quantum materials requires full control of the growth and surface quality of the specimens in order to perform experiments on their atomic structure and electron states leading to ultimate analysis of their intrinsic properties [1-2]. We report results on epitaxial FeSe thin films grown by pulsed laser deposition (PLD) on CaF2 (001) substrates as obtained by exploiting the advantages of an all-in-situ ultra-high vacuum (UHV) laboratory allowing for direct high-resolution surface analysis by scanning tunneling microscopy (STM), synchrotron radiation X-ray photoelectron spectroscopy (XPS) and angle-resolved photoemission spectroscopy (ARPES) on fresh surfaces. FeSe films are optimized via PLD growth protocols and were fine-tuned by optimizing target-to-substrate distance d and ablation frequency, atomically flat terraces with unit-cell step heights are obtained, overcoming the spiral morphology often observed by others. In-situ ARPES with linearly polarized horizontal and vertical radiation shows hole-like and electron-like pockets at the Gamma and M points of the Fermi surface, consistent with previous observations on cleaved single crystal surfaces. The control achieved in growing quantum materials with volatile elements such as Se by in-situ PLD makes it possible to address the fine analysis of the surfaces by in-situ ARPES and XPS. The study opens wide avenues for the PLD based heterostructures as work-bench for the understanding of proximity-driven effects and for the development of prospective devices based on combinations of quantum materials.

[1] Ge, J.F.; Liu, Z.L.; Liu, C.; Gao, C.L.; Qian, D.; Xue, Q.K.; Liu, Y.; Jia, J.F. Superconductivity above 100 K in single-layer FeSe films on doped SrTiO3. Nat. Mater. 2015, 14, 285–289.
[2] Sakoda, M.; Iida, K.; Naito, M. Recent progress in thin-film growth of Fe-based superconductors: superior superconductivity achieved by thin films. Supercond. Sci. Technol. 2018, 31, 093001
[3] Chaluvadi , S.K.; Mondal,D.; Bigi, C.; Fujii, J.; Adhikari, R.;Ciancio, R.; Bonanni, A.; Panaccione,G.; Rossi, G. Vobornik, I.; Orgiani, P.Direct-ARPES and STM Investigationof FeSe Thin Film Growth by Nd:YAGLaser.Coatings2021,11, 276.

Primary author

Dr Sandeep Kumar Chaluvadi (CNR-IOM)

Co-authors

Dr Shyni Punathum Chalil (CNR-IOM) Dr Federico Mazzola (CNR-IOM) Dr Debashis Mondal (CNR-IOM) Dr Chiara Bigi (CNR-IOM) Dr Jun Fujii (CNR-IOM) Dr Giancarlo Panaccione (IOM Institute - Trieste - CNR) Dr Giorgio Rossi (CNR-IOM) Dr Ivana Vobornik (CNR-IOM) Dr Pasquale Orgiani (CNR-IOM)

Presentation Materials